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Phys_org
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Aluminum scandium nitride films: Enabling next-gen ferroelectric memory devices
Imagine a thin film, just nanometers thick, that could store gigabytes of data—enough for movies, video games, and videos. This is the exciting potential of ferroelectric materials for memory storage. These materials have a unique arrangement of ions, resulting in two distinct polarization states analogous to 0 and 1 in binary code, which can be used for digital memory storage. ⌘ Read more